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| FQH90N10V2 100V N-Channel MOSFET October 2005 QFET FQH90N10V2 100V N-Channel MOSFET Features * 105A, 100V, RDS(on) = 10m @VGS = 10 V * Low gate charge ( typical 147 nC) * Low Crss ( typical 300 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175C maximum junction temperature rating (R) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. D G GD S TO-247 FQH Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FQH90N10V2 100 105 78 420 30 2430 105 33 4.5 330 2.2 -55 to +175 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.45 -40 Unit C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQH90N10V2 Rev. A FQH90N10V2 100V N-Channel MOSFET Package Marking and Ordering Information Device Marking HV290N10 Device FQH90N10V2 Package TO-247 TC = 25C unless otherwise noted Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 100V, VGS = 0V VDS = 80V, TC = 150C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 52.5A VDS = 40V, ID = 52.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 100 -----2.0 ------ Typ. -0.1 -----8.5 72 4730 1180 300 52 492 304 355 147 28 60 ---114 0.54 Max Units --1 10 100 -100 4.0 10 -6150 1530 390 114 994 618 720 191 --105 420 1.4 --V V/C A A nA nA V m S pF pF pF ns ns ns ns nC nC nC A A V ns C On Characteristics Dynamic Characteristics Switching Characteristics VDD = 100V, ID = 90A RG = 25 (Note 4, 5) ------(Note 4, 5) VDS = 80V, ID = 90A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 105A VGS = 0V, IS = 90A dIF/dt =100A/s (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 105A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQH90N10V2 Rev. A 2 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Figure 2. Transfer Characteristics 10 2 175C 25C ID, Drain Current [A] 10 2 ID, Drain Current [A] 10 1 -55C 10 0 10 1 * Notes : 1. 250s Pulse Test 2. TC = 25C -1 * Notes : 1. VDS = 40V 2. 250s Pulse Test 10 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 30 RDS(ON) [m], Drain-Source On-Resistance VGS = 10V 20 IDR, Reverse Drain Current [A] 25 10 2 10 1 15 10 VGS = 20V 175C 10 0 25C * Notes : 1. VGS = 0V 2. 250s Pulse Test 5 * Note : TJ = 25C 0 0 100 200 300 400 500 600 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 11000 10000 9000 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VGS, Gate-Source Voltage [V] VDS = 50V 8 Capacitance [pF] 7000 6000 5000 4000 3000 2000 1000 0 -1 10 10 0 Ciss Coss * Notes ; 1. VGS = 0 V VDS = 80V 6 4 Crss 2. f = 1 MHz 2 * Note : ID = 90A 10 1 0 0 20 40 60 80 100 120 140 160 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQH90N10V2 Rev. A 3 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 45 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250A 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 3 Operation in This Area is Limited by R DS(on) 10 s 100 90 80 ID, Drain Current [A] ID, Drain Current [A] 10 2 10 2 100 s 1 ms 10 ms DC 70 60 50 40 30 20 10 10 1 10 0 * Notes : 1. TC = 25C 2. TJ = 175C 3. Single Pulse 10 -1 10 0 10 1 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 150 175 TC, Case Temperature [C] Figure 11. Transient Thermal Response Curve 10 0 ZJC(t), Thermal Response D =0.5 -1 10 0 .2 0 .1 0 .0 5 0.02 0.01 single pu lse * N ote s : 1 . Z JC (t) = 0 .45 C /W M a x. 2 . D u ty F ac to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [se c ] FQH90N10V2 Rev. A 4 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQH90N10V2 Rev. A 5 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQH90N10V2 Rev. A 6 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FQH90N10V2 Rev. A 7 www.fairchildsemi.com FQH90N10V2 100V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQH90N10V2 Rev. A www.fairchildsemi.com |
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